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Research Project: Barrier Layers for Copper Metallisation 2
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Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic layer deposition of W1.5N barrier films for Cu Metallization Journal of The Electrochemical Society, 152 (7). G522-527. ISSN 0013-4651 *** ISI Impact 3,014 ***
Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA. pp. 769-774. Materials Research Society. ISBN 978-15589-9814-8


Bystrova, S. (2004) Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties. PhD thesis, University of Twente. ISBN 90-365-2114-9


Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2 In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 730-734. Technology Foundation STW. ISBN 90-73461-39-1


Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterisation of Ta-based barrier films on SiLK for Cu-metalisation. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 9-13. Technology Foundation STW. ISBN 90-73461-33-2


Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317 *** ISI Impact 1,277 ***